Through Substrate Features in Semiconductor Substrates

ABSTRACT

Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.

This application is a divisional of U.S. application Ser. No.12/567,551, filed on Sep. 25, 2009, which application is herebyincorporated herein by reference.

TECHNICAL FIELD

The present invention relates generally to through substrate features,and more particularly to through substrate features in semiconductorsubstrates.

BACKGROUND

Semiconductor devices are used in many electronic and otherapplications. Semiconductor devices comprise integrated circuits thatare formed on semiconductor wafers by depositing many types of thinfilms of material over the semiconductor wafers, and patterning the thinfilms of material to form the integrated circuits.

There is a demand in semiconductor device technology to integrate manydifferent functions on a single chip, e.g., manufacturing various typesof active and passive devices on the same die. However such integrationcreates additional challenges that need to be overcome. For example,conventional structures require large surface areas or have poorelectrical quality. For aggressive integration, it is essential to havea low surface area along with a high quality factor. Further,conventional processes require separate formation of the inductorincreasing the process cost.

In one aspect, the present invention provides a structure and method offorming inductors having high inductivity and low resistivity without asignificant increase in production costs.

SUMMARY OF THE INVENTION

Embodiments of the invention include through substrate coils and/orthrough substrate openings forming a kerf region. In accordance with anembodiment of the present invention, a semiconductor device comprises athrough substrate via disposed in a first region of a semiconductorsubstrate, and a through substrate conductor coil disposed in a secondregion of the semiconductor substrate.

The foregoing has outlined rather broadly the features of an embodimentof the present invention in order that the detailed description of theinvention that follows may be better understood. Additional features andadvantages of embodiments of the invention will be describedhereinafter, which form the subject of the claims of the invention. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiments disclosed may be readily utilized as a basisfor modifying or designing other structures or processes for carryingout the same purposes of the present invention. It should also berealized by those skilled in the art that such equivalent constructionsdo not depart from the spirit and scope of the invention as set forth inthe appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a perspective view of a through substrate (TS) coilwith a cavity along with a through substrate via (TSV) contact and a TSkerf in accordance with an embodiment of the invention;

FIG. 2, which includes FIGS. 2 a and 2 b, illustrates a perspective viewof through substrate coils in accordance with an embodiment of theinvention;

FIG. 3, which includes FIGS. 3 a and 3 b, illustrates a top view of athrough substrate coil, in accordance with an embodiment of theinvention;

FIG. 4, which includes FIGS. 4 a-4 k, illustrates a semiconductor devicecomprising a through substrate coil during various stages offabrication, in accordance with an embodiment of the invention, whereinFIGS. 4 a-4 b and 4 d-4 k illustrate cross sectional views and FIG. 4 cillustrates a top view; and

FIG. 5, which includes FIGS. 5 a-5 c, illustrates a transformer coil inaccordance with an embodiment of the invention, wherein FIG. 5 aillustrates a perspective view, and whereas FIGS. 5 b and 5 c illustratetop views of the transformer device.

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts unless otherwise indicated. The figures aredrawn to clearly illustrate the relevant aspects of the embodiments andare not necessarily drawn to scale.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of various embodiments are discussed in detailbelow. It should be appreciated, however, that the present inventionprovides many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use the invention,and do not limit the scope of the invention.

The present invention will be described with respect to variousembodiments in a specific context, namely through substrate vias,inductors, and dicing openings formed using shared process steps. Theinvention may also be applied, however, to other through substratefeatures not discussed herein.

A structural embodiment of the invention will be described first usingFIG. 1. Further structural embodiments will be described with respect toFIGS. 2, 3 and 5. A method of fabrication of the semiconductor devicewill be described using FIG. 4.

FIG. 1 illustrates a structural embodiment of a semiconductor devicecomprising a through substrate coil 50 with a cavity 60 disposed in aspiral coil region 10, a through substrate via 70 disposed in a contactregion 20, and a through substrate opening 80 forming a kerf 40 disposedin a kerf region 30 of a substrate 100.

The through substrate coil 50 is disposed within the substrate 100; thethrough substrate coil 50 is formed in a through substrate opening thatis completely or partially filled with a conductive fill material 190and lined with an insulating dielectric liner (e.g., sidewall dielectriclayer 160). The sidewall dielectric layer 160 insulates the conductivefill material 190 from the substrate 100. In various embodiments, thethrough substrate coil 50 may comprise more than one through substraterings 47-49. The deep through substrate coil 50 has a lower resistancethan metal lines disposed within metallization levels. The use ofthrough substrate coil 50 as the inductor consequently improves thequality (Q) factor of the inductor, which is inversely proportional tothe total resistance of the inductor coil.

In various embodiments, the through substrate rings 47-49 are coupled toeach other through the front side metallization. Alternatively, in someembodiments, the through substrate rings 47-49 are coupled to each otherthrough a back side metallization, e.g., through a back sideredistribution layer.

In one embodiment, a cavity 60 is disposed in the central core of thethrough substrate coil 50, the cavity being disposed as a throughsubstrate opening. The diameter of the cavity 60 is larger than thediameter for the through substrate via 70 in one embodiment. In variousembodiments, the cavity 60 is wider than the through substrate via 70 byat least a factor of two.

In various embodiments, the through substrate coil 50 may be formed as adiscrete device or in a single integrated chip comprising othercircuitry.

FIG. 1 also illustrates a through substrate via 70 coupling the frontside metallization with the back side circuitry.

A through substrate opening 80 forming a kerf 40 is disposed in a kerfregion 30. In a typical process, dozens or hundreds of chips aretypically manufactured on a single semiconductor wafer. The individualdies are singulated by sawing the integrated circuits along a scribeline within an area called the kerf (or dicing channel or dicingstreet). Cracks formed either during or after the sawing operation maypropagate into the die resulting in the failure of the die/chip.Consequently, special protective structures are added into the die toprevent crack propagation. This consumes a large surface area of thesubstrate (both on the kerf and additional region around the dieboundary) to accommodate these protective structures as well as to allowfor errors during the mechanical sawing process.

Unlike conventional systems, the width of the kerf 40 in variousembodiments is much smaller because the aspect ratio of the throughsubstrate opening 80 is high due to the fact that it is formed alongwith the through substrate via 70 instead of a mechanical sawing/dicingprocess which requires a larger surface width. Further, the reducedmechanical sawing advantageously reduces/prevents crack formation duringthe dicing process.

Advantageously, embodiments of the invention enable higher siliconefficiency due to smaller kerf widths than other conventional kerfs andalso due to the use of non-rectangular chip layouts (e.g., for coils).Further savings in silicon real estate is obtained due to optimizedrouting of the wafer front-side circuitry by using back-side circuitryenabled by TSVs. In various embodiments, metallization layers disposeddirectly above the coils may include other devices (e.g., MIMs,resistors, fuses, and pads) enabling further savings in silicon realestate.

FIG. 2 illustrates perspective views of further structural embodiments,wherein FIG. 2 a illustrates an embodiment having a kerf formed with athrough substrate opening, and wherein FIG. 2 b illustrates a spiralinductor with a magnetic central core in another embodiment.

FIG. 2 a illustrates a conventional spiral coil inductor 41 formedwithin the metallization layers above a substrate 100. The conventionspiral coil inductor 41 is typically formed using a damascene processand is disposed within a single metal level.

FIG. 2 a illustrates a semiconductor substrate comprising a first and asecond through substrate via 70 a and 70 b and a through substrateopening 80 forming a kerf 40. In this embodiment, a through substrateopening 80 is used to form the kerf 40 and hence utilizes all theadvantages discussed above with respect to forming kerf regions thatutilize less surface area on the substrate 100.

FIG. 2 b illustrates an embodiment wherein the central core of thethrough substrate coil 50 is filled with a magnetic material 61 of highpermeability. The magnetic material 61 may comprise a ferromagnetic orferrimagnetic material including MnZn ferrite, NiZn ferrite, NiFeferrite, NiCuZn alloy, mu-metals, iron, nickel, and combinationsthereof. The high permeability of the magnetic core causes the magneticfield lines to be concentrated in the core material. The use of themagnetic core increases the inductance of the spiral inductor by manymultiples in various embodiments. The increased inductance helps toimprove the quality factor which depends directly on the inductance.

In various embodiments, the through substrate coil 50 can be contactedeither from the wafer front side (e.g., through contact pads 45) or fromthe wafer back side (through back side pads coupled to a throughsubstrate via). The illustrated embodiment shows a front side contact tothe through substrate coil 50 using contact pads 45.

FIG. 3, which includes FIGS. 3 a and 3 b, illustrates a top view of thethrough substrate coil 50. In one embodiment, through substrate coil 50are formed as concentric rings (FIG. 3 a), for example coupled throughinterconnects features 51, whereas in another embodiment, the spiralconductor coils are formed as a spiral coil (FIG. 3 b). Further, invarious embodiments, any suitable configuration of the spiral coils maybe used.

FIG. 4, which includes FIG. 4 a-4 k, illustrates a semiconductor devicecomprising a through substrate coil during various stages of processing,in accordance with an embodiment of the invention, wherein FIGS. 4 a-4b, and 4 d-4 k illustrate cross sectional views and FIG. 4 c illustratesa top view.

With reference now to FIG. 4 a, the semiconductor device is illustratedafter back end processing. An active region 1, spiral coil region 10, acontact region 20, and a kerf region 30 are illustrated in a substrate.Each region represents corresponding device structure to be built duringprocessing. In various embodiments, at this stage in the process, thefront end processes are completed and active devices fabricated in theactive region 1. The device regions are formed near a top surface of asubstrate 100.

The device regions, or active circuitry, can include transistors,resistors, capacitors, inductors or other components used to formintegrated circuits. For example, active areas that include transistors(e.g., CMOS transistors) are formed separate from one another byisolation regions, e.g., shallow trench isolation.

Next, metallization is formed over the device regions to electricallycontact and interconnect the device regions. The metallization andactive circuitry together form a completed functional integratedcircuit. In other words, the electrical functions of the chip can beperformed by the interconnected active circuitry. In logic devices, themetallization may include many layers, e.g., nine or more, of copper. Inmemory devices, such as DRAMs, the number of metal levels may be lessand may be aluminum.

The components formed during the front-end processing are interconnectedby back end of line (BEOL) processing. During this process, contacts aremade to the semiconductor body and are interconnected using metal linesand vias. As discussed above, modern integrated circuits incorporatemany layers of vertically stacked metal lines and vias (multilevelmetallization) that interconnect the various components in the chip. InFIG. 4 a, only the first level of metal is illustrated above thesubstrate 100. At this stage of processing, the back end processes arealso completed, and hence all the metallization levels connecting theactive devices are fabricated.

Referring to FIG. 4 a, first, second, and third metallization insulationlayers 120, 140, and 150 are formed above a substrate 100. Each of thefirst, second, and third metallization insulation layers 120, 140, and150 may comprise multiple layers. The first, second, and thirdmetallization insulation layers 120, 140, and 150 are separated byfirst, second, and third etch stop liners 110, 130 and 131.

The first metallization insulation layer 110 preferably comprises anoxide such as tetra ethyl oxysilane (TEOS) or fluorinated TEOS (FTEOS),but various embodiments may comprise insulating materials typically usedin semiconductor manufacturing for inter-level dielectric (ILD) layers.The first metallization insulation layer 120 may comprise a thickness ofabout 500 nm or less, for example, although alternatively, the firstmetallization insulation layer 120 may comprise other dimensions.

The second and third metallization insulation layers 140 and 150comprise insulating materials typically used in semiconductormanufacturing for inter-level dielectric (ILD) layers, such as SiO2,tetra ethyl oxysilane (TEOS), or a lower dielectric constant materialsuch as fluorinated TEOS (FTEOS), doped glass (BPSG, PSG, BSG), organosilicate glass (OSG), fluorinated silicate glass (FSG), or spin-on glass(SOG). The second and third metallization insulation layers 140 and 150may comprise ultra-low k materials including porous dielectricmaterials.

Multiple metal lines comprising first metal lines 145 are disposed abovethe substrate 100. The metal lines are connected via the contact plugs121, first vias 141, and further vias (not shown V₃, V₄, V₅, etc.).First vias 141 are disposed above the first metal lines 145. The firstvias 141 comprise a copper core with an outer liner preferably oftantalum nitride and tantalum, although in some embodiments, the firstvias 141 comprise tungsten and outer liners of titanium and titaniumnitride or other metal liners or liner combinations.

In the spiral coil region, landing pads 146 are formed within the secondmetallization insulating layer 140. A passivation layer (not shown) isdeposited over the last metal level. A hard mask layer (not shown) maybe deposited over the passivation layer to protect the passivation layerduring subsequent through substrate via etch.

Subsequently, the substrate 100 is thinned from the back surface andpassivated. The substrate 100 is thinned exposing a lower surface bygrinding to a desired thickness. The typical thickness of the substrate100 after the thinning is about 30 μm to about 200 μm. In differentembodiments, the thinning may also be performed chemically or by using aplasma etch. For example, a modified plasma etch may be used to thin thesilicon wafer from the back side. Such techniques have the additionaladvantage of not damaging the front side.

FIG. 4 b illustrates a cross sectional and 4 c illustrates acorresponding top view of the semiconductor device during a subsequentstage of processing in accordance with an embodiment of the invention.Referring to FIGS. 4 b and 4 c, first, second, third, and fourth throughsubstrate openings 151-154 are etched in the spiral coil region 10, thecontact region 20, and the kerf region 30 after depositing a hard masklayer 155.

In some embodiments, through substrate openings of different diametersare etched. In one embodiment illustrated in FIG. 4 b, multiple firstthrough substrate openings 151 are etched in the spiral coil region 10.A second through substrate opening 152 is etched in the spiral coilregion 10. The second through substrate opening 152 is etched in thecentral region of the spiral coil region 10, thus forming a core of thethrough substrate coil. Further, third through substrate opening 153 isetched in the contact region 20, and fourth through substrate opening154 is etched in the kerf region 30. In various embodiments, the throughsubstrate openings in the contact region 20 and the kerf region 30 maycomprise a different diameter than the through substrate openings in thespiral coil region 10.

In various embodiments, the first, the second, the third, and the fourththrough substrate openings 151-154 are formed using a resist onlyprocess, a Bosch Process, or by depositing a hard mask layer and etchingthe substrate 100 using a vertical reactive ion etch. In one embodiment,only a resist mask is used. If the resist budget is not sufficient, theuse of a hard mask and vertical reactive ion etch may be preferred if asmooth sidewall is required. However, this integration scheme requiresthe removal of remaining hard mask residues. Hence, in some embodiments,a Bosch process that uses resist only and a deposition-etch processsequence which overcomes these limitations can be applied. The Boschprocess produces sidewalls that are scalloped.

Referring next to FIG. 4 d, a second etch is used to extend the throughsubstrate openings into the first metallization insulating layer 120through the first etch stop liner 110. The second etch may comprise asuitable anisotropic etch. The second etch stops at the landing pads146, and hence stops the first and the third through substrate openings151 and 153. However, a timed etch is needed to stop the second etchprogressing through the second through substrate opening 152.

As illustrated next in FIG. 4 e, a sidewall dielectric layer 160 isdeposited over the sidewalls and bottom surface of the first, thesecond, the third, and the fourth through substrate openings 151-154.The sidewall dielectric layer 160 electrically isolates the conductivematerial in the through substrate via from active devices on thesubstrate 100. The sidewall dielectric layer 160 is depositedconformally over the exposed surfaces of the first, the second, thethird, and the fourth through substrate openings 151-154. The sidewalldielectric layer 160 may be deposited by a suitable low temperatureprocess such as plasma enhanced CVD and/or organic vapor phasedeposition.

In some embodiments, the sidewall dielectric layer 160 isanisotropically etched forming sidewall spacers on the first, thesecond, the third, and the fourth through substrate openings 151-154(FIG. 4 f). In the embodiment described here, the sidewall dielectriclayer 160 is removed from the bottom of the first, the second, thethird, and the fourth through substrate openings 151-154. In someembodiments, the sidewall dielectric layer 160 is removed from thebottom of the first and the third through substrate openings 151 and 153but not the second through substrate opening 152.

Referring next to FIG. 4 g, a trench metal liner 170 is deposited overthe sidewall dielectric layer 160 and a photo resist 180 is depositedand patterned. The trench metal liner 170 is conformal, and in oneembodiment comprises a single layer of Ta, TaN, W, WN, WSi, TiN, and/orRu as examples. In various embodiments, the trench metal liner 170 isused as a barrier layer for preventing metal from diffusing into theunderlying substrate 100 and the sidewall dielectric layer 160. Thetrench metal liner 170 is deposited, for example, using sputteringprocesses. For high aspect ratio features, highly directional processessuch as collimated sputtering techniques or CVD may be used.

In various embodiments, the trench metal liner 170 comprises multiplelayers. In one embodiment, the trench metal liner 170 comprises a seedlayer of copper over the diffusion barrier layer. This seed layer isdeposited conformally over the barrier layer, using for example, ametal-organic CVD (MOCVD) process. For example, in one embodiment, aMOCVD process is used to deposit a TiN layer. In various embodiments,the trench metal liner 170 is deposited using a CVD process, or acollimated sputter deposition process. In one embodiment, the trenchmetal liner 170 comprising Ta or TaN is deposited using a collimatedsputter deposition process. In another embodiment, the trench metalliner 170 comprising tungsten is deposited using a CVD process.

A dry film photoresist 180 is deposited after the trench metal liner 170is deposited and patterned using photo lithography. The dry filmphotoresist 180 comprises a negative tone, aqueous developable dryresist, and is typically coated to a film thickness of 10-40 μm insingle layer application. Examples of commercially available dry filmphotoresist 180 include Ordyl Alpha 900/Tokyo Ohka, MX5000/DuPont.Alternatively, a dummy layer may be filled into the first, the second,the third, and the fourth through substrate openings 151-154 beforedepositing the photo resist layer. The dummy layer can be removed duringsubsequent etching. Patterns are formed using photo lithography to openareas for filling the first and the third through substrate openings 151and 153. The photo lithography patterns for features in both the contactregion 20 and the spiral coil region 10 simultaneously. The photolithography patterns for both the through substrate vias andredistribution lines in the contact region 20, and the through substratecoils (which may also include backside redistribution lines) in thespiral coil region 10.

Referring to FIG. 4 h, a conductive fill material 190 is then depositedusing, for example, an electroplating process. In some embodiments, theconductive fill material 190 is partially filled leaving a gap while inother embodiments it is fully filled. In one embodiment, the conductivefill material 190 comprises copper. In other embodiments, the conductivefill material 190 comprises aluminum, tantalum, ruthenium, platinum,nickel, silver, gold, tungsten, tin, lead, or combinations thereof. Ifthe conductive fill material 190 comprises tungsten, a bi-layer seedlayer comprising CVD titanium nitride and silicon doped tungsten areused. Similarly, in some embodiments, the conductive fill material 190comprises doped poly-silicon or silicides.

As next illustrated in FIG. 4 i, the dry film photoresist 180 isstripped, exposing the trench metal liner 170 (FIGS. 4 g and 4 h) in thesecond through substrate opening 152. The exposed trench metal liner 170is etched e.g., using a wet etch chemistry. Hence, all conductivematerial from the second through substrate opening 152 is now removed.

As illustrated in FIG. 4 j, an imide layer 210 is deposited into theunfilled portions of the first and the third through substrate openings151 and 153 to form a liner on the sidewalls and bottom surface of thesecond through substrate opening 152. The imide layer 210 is patternedto expose back side contacts such as backside pad 200.

Alternatively, in some embodiments, the second through substrate opening152 is filled with a magnetic material as described with respect to FIG.2 b. In such embodiments, after patterning a photo resist thatselectively exposes the second through substrate opening 152, themagnetic material is deposited into the second through substrate opening152. The deposition is followed by the deposition of the imide layer210.

As shown in FIG. 4 k, the wafer is subsequently diced by extending thefourth through substrate opening 154 in the kerf region 30 into theupper metallization layers using suitable mechanical and/or chemicalprocesses.

Advantageously in various embodiments, the through substrate coils areformed along with the through substrate vias and share the sameprocesses. Similarly, the through substrate opening for dicing the waferis performed along with the through substrate via opening in the contactregion 20. This advantageously reduces the fabrication cost whileimproving the electrical performance because of the improved design ofthe through substrate coil.

For many applications, the high process costs for the whole TSV module(etching, liner deposition and filling) do not compensate the gainedbenefit in chip area. Using embodiments of the invention lowers theprocess costs extending the field of application of TSVs significantly.

Currently, spiral inductors in the upper metallization layers arecommonly used to fabricate integrated coils. This integration givesoptimized quality factors due to its spacing from the substrate. Butthis is not sufficient for applications, where Ohmic losses in the coilare critical and higher inductances are required. Embodiments of theinvention reduce resistance while increasing the inductance by usingvery deep trenches filled with metal, thus improving the quality factor.However, this gain in quality factor does not increase the cost offabrication because it is shared with the cost of producing TSV contactsand/or savings in dicing. Similarly, the dicing costs are shared withthe cost of forming TSV contacts.

In various embodiments, the present invention allows a cost efficientproduction because four features are fabricated in one process moduleusing the same materials and unit process steps, the four features beinga through substrate coil, a cavity in the core of the coil, a substratecontact, and the separation of the chips.

Advantageously, fabrication of coils in silicon allows use of siliconreactive ion etching processes where typically, deeper trenches withhigh aspect ratios can be achieved compared to etch processes in othermaterials. The electrical benefits of coils formed in silicon are higherinductivity of coil and lower Ohmic losses in the coil.

Embodiments of the invention reduce processing costs by using common orsingle unit processes for multiple structures, lower dicing costs byavoiding slow mechanical dicing, and cheaper chip packaging because padson the wafer backside allow chip stacking and avoid expensive wirebonding.

FIG. 5, which includes FIGS. 5 a and 5 c, illustrates a transformer coilin accordance with an embodiment of the invention. FIG. 5 a illustratesa perspective view whereas FIGS. 5 b and 5 c illustrate top views of thetransformer device.

Referring to FIG. 5 a, the semiconductor device comprises a transformercomprising a first transformer coil 500 and a second transformer coil550. In one embodiment, the first transformer coil 500 forms thetransmitter coil, and the second transformer coil 550 forms the receivercoil.

The first transformer coil 500 is formed within the metallization layersand disposed within the dielectric layers 530. The second transformercoil 550 in various embodiments comprises a through substrate coil 50formed within a substrate 100. The through substrate coil 50 is disposedwithin the substrate 100 and formed in a through substrate opening thatis completely or partially filled with a conductive fill material 190and lined with an insulating dielectric liner (e.g., sidewall dielectriclayer 160).

The first and the second transformer coils 500 and 550 are inductivelycoupled. The thickness of the dielectric isolation between the first andthe second transformer coils 500 and 550 may be changed to change theinductive coupling between the first and the second transformer coils500 and 550. Similarly, the dielectric material between the first andthe second transformer coils 500 and 550 may be changed to change theinductive coupling between them. Hence, the breakdown voltage can beeasily achieved by simple changes in the process. Consequently, andadvantageously unlike conventional transformer designs, deep via holesthrough the thick imide isolation is not necessary.

The first transformer coil 500 is coupled through first and second frontside contact pads 510 and 520 (see also FIG. 5 b). Although in FIG. 5 a,the first and the second front side contact pads 510 and 520 aredisposed on the top surface of the semiconductor device, in variousembodiments, the first and second front side contact pads 510 and 520may be formed within lower level metallization levels. The throughsubstrate coil 50 (and hence the second transformer coil 550) is coupledto first and second back side contact pads 560 and 570 (FIGS. 5 a and 5c). The first and second back side contact pads 560 and 570 may beformed within a backside redistribution line layer in some embodiments.

As the contacts of the first transformer coil 500 are disposed on thetop side while the contacts of the second transformer coil 550 aredisposed on the bottom side, the described embodiment enables easyassembly of the receiver and transmitter ICs via chip stacking. Hence,in various embodiments, the transformers can be built using 3Dintegration as System in Package units.

In various embodiments, the semiconductor device may also comprise athrough substrate opening 80 forming a kerf 40. Similarly, thesemiconductor device may comprise other components including throughsubstrate vias, and other active circuitry.

Referring to FIG. 5 c, the through substrate coil 50 comprises a spiralcoil. Sharp corners are avoided in the layout of both the first and thesecond transformer coils 500 and 550 in order to withstand highvoltages. In various embodiments, the through substrate coil 50 formingthe second transformer coil 550 may comprise many turns or windings.While not shown in FIG. 5 c, some parts of the through substrate coil 50may be coupled through a redistribution line layer or a suitableinterconnect.

As illustrated in FIG. 5 c, the second transformer coil 550 does nothave a core region. In various embodiments, the through substrate coil50 may be formed as a discrete device or in a single integrated chipcomprising other circuitry. In various embodiments, other suitableshapes of the through substrate coils may be used for forming thetransformer.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. For example,it will be readily understood by those skilled in the art that many ofthe features, functions, processes, and materials described herein maybe varied while remaining within the scope of the present invention.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed is:
 1. A semiconductor device comprising: a throughsubstrate via disposed in a first region of a semiconductor substrate;and a through substrate conductor coil disposed in a second region ofthe semiconductor substrate.
 2. The device of claim 1, wherein thethrough substrate conductor coil is formed around a central region, andwherein the central region comprises a material different from thesemiconductor substrate.
 3. The device of claim 2, wherein the centralregion comprises a magnetic material.
 4. The device of claim 1, whereinthe through substrate conductor coil is formed around a central region,and wherein the central region comprises a cavity.
 5. The device ofclaim 1, wherein the through substrate conductor coil comprises aconductive material disposed within a through substrate opening, theconductive material being isolated from the substrate by an insulatingliner.
 6. The device of claim 5, wherein the conductive materialcomprises a non-magnetic metallic material.
 7. The device of claim 1,wherein the through substrate conductor coil comprises a spiral coil. 8.The device of claim 1, wherein the through substrate conductor coilcomprises a concentric coil.
 9. The device of claim 1, wherein thethrough substrate conductor coil forms an inductor.
 10. The device ofclaim 1, further comprising through substrate conductor coil disposed inthe first region, the through substrate conductor coil inductivelycoupled to the through substrate conductor coil.
 11. A semiconductordevice comprising: a first through substrate opening within asemiconductor substrate, the first through substrate opening extendingfrom a bottom surface of the semiconductor substrate to an opposite topsurface of the semiconductor substrate, wherein, in a plane parallel tothe bottom surface, the first through substrate opening includes a ringshaped through substrate trench opening extending around a centralregion, wherein the ring shaped through substrate trench opening extendsfrom the bottom surface of the semiconductor substrate to the topsurface of the semiconductor substrate; an insulating material liningsidewalls of the first through substrate opening; and a conductivematerial at least partially filling the first through substrate opening.12. The device of claim 11, wherein the conductive material forms a coilfor an inductor, and wherein the inductor comprises the central regionsurrounded by the coil and the first through substrate opening filledwith the conductive material.
 13. The device of claim 11, furthercomprising a second through substrate opening in the central region,wherein the first through substrate opening is formed around the centralregion.
 14. The device of claim 13, further comprising a magneticmaterial at least partially filling the second through substrateopening.
 15. The device of claim 11, wherein the first through substrateopening comprises an opening for a spiral coil, and wherein the ringshaped through substrate trench opening comprises a spiral design. 16.The device of claim 11, wherein the first through substrate openingcomprises another ring shaped through substrate trench opening extendingaround the central region and the ring shaped through substrate trenchopening, and wherein the ring shaped through substrate trench openingand the another ring shaped through substrate trench opening form a partof an opening for a concentric coil.
 17. A semiconductor devicecomprising: a first, a second, and a third through substrate openingsdisposed within a semiconductor substrate, the first through substrateopening being disposed at least partially around the second throughsubstrate opening, the first, the second, and the third throughsubstrate openings extending from a bottom surface of a semiconductorsubstrate to an opposite top surface of the semiconductor substrate; afirst liner disposed within the first through substrate opening; asecond liner disposed within the second through substrate opening; athird liner disposed within the third through substrate opening; aninsulating material lining the first, the second, and the third throughsubstrate openings; and a conductive material at least partially fillingthe first and the third through substrate openings to form a portion ofan inductor and a portion of a through substrate via.
 18. The device ofclaim 17, further comprising a magnetic material filling the secondthrough substrate opening.
 19. The device of claim 17, wherein theconductive material comprises a non-magnetic metallic material.
 20. Thedevice of claim 17, further comprising: a fourth through substrateopening disposed in the semiconductor substrate, the fourth throughsubstrate opening being disposed around a first semiconductor die regioncomprising the first, the second, and the third through substrateopenings, the fourth through substrate opening extending from the bottomsurface of the semiconductor substrate to the top surface of thesemiconductor substrate; and an insulating material lining the fourththrough substrate opening, wherein the fourth through substrate openingextends through a metallization layer disposed over the top surface ofthe semiconductor substrate to separate the first semiconductor dieregion from a remaining portion of the semiconductor substrate.
 21. Thedevice of claim 17, further comprising spacers disposed on the first,the second, and the third through substrate openings.
 22. The device ofclaim 17, wherein the first through substrate opening and the thirdthrough substrate have substantially the same width along the bottomsurface, and wherein the first through substrate opening is narrowerthan the second through substrate.
 23. A semiconductor devicecomprising: a first through substrate opening within a semiconductorsubstrate, the first through substrate opening extending from a bottomsurface of the semiconductor substrate to an opposite top surface of thesemiconductor substrate; an insulating material lining sidewalls of thefirst through substrate opening; a coil for an inductor disposed in thesemiconductor substrate, the coil comprising a conductive material atleast partially filling the first through substrate opening, wherein theinductor comprises a central region surrounded by the coil; and a secondcoil disposed in a metallization layer above the top surface of thesemiconductor substrate, the second coil being inductive coupled to thecoil.
 24. The device of claim 23, wherein the central region comprises asecond through substrate opening filled at least partially with amagnetic material different from the conductive material, wherein theconductive material comprises a non-magnetic metallic material.
 25. Thedevice of claim 24, wherein the first through substrate opening isnarrower than the second through substrate.